器件名称: 2N5069
功能描述: Silicon NPN Power Transistors
文件大小: 46.72KB 共3页
简 介:Product Specification
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Silicon NPN Power Transistors
2N5067 2N5068 2N5069
DESCRIPTION ·With TO-3 package ·Complement to type 2N4901,2N4902,2N4903 ·Low collector-emitter saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N5067 VCBO Collector-base voltage 2N5068 2N5069 2N5067 VCEO Collector-emitter voltage 2N5068 2N5069 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 5 10 1 87.5 150 -65~200 V A A A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5067 VCEO Collector-emitter sustaining voltage 2N5068 2N5069 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=1A; IB=0.1A IC=5A ;IB=1A IC=1A ; VCE=2V VCE=Rat……
