器件名称: 1SS81
功能描述: Silicon Epitaxial Planar Diode for High Voltage Switching
文件大小: 138.93KB 共5页
简 介:1SS81
Silicon Epitaxial Planar Diode for High Voltage Switching
REJ03G0561-0300 (Previous: ADE-208-148B) Rev.3.00 Mar 22, 2005
Features
High reverse voltage. (VR = 150 V) High reliability with glass seal.
Ordering Information
Type No. 1SS81 Cathode band Verdure Package Name DO-35 Package Code (Previous Code) GRZZ0002ZB-A (DO-35)
Pin Arrangement
1 Cathode band
2
1. Cathode 2. Anode
Rev.3.00 Mar 22, 2005 page 1 of 4
1SS81
Absolute Maximum Ratings
(Ta = 25°C)
Item Peak reverse voltage Reverse voltage Average rectified current Peak forward current Non-Repetitive peak forward surge current Power dissipation Junction temperature Symbol VRM * VR IO IFM 2 IFSM * Pd Tj
1
Value 200 150 200 625 1 400 175
Unit V V mA mA A mW °C °C
Storage temperature Tstg 65 to +175 Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Reverse recovery time Symbol IR1 IR2 VF C trr Min — — — — — Typ — — — 1.5 — Max 200 100 1.0 — 100 Unit nA A V pF ns Test Condition VR = 150 V VR = 200 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 30 mA, Irr = 3 mA, RL = 100
Rev.3.00 Mar 22, 2005 page 2 of 4
1SS81
Main Characteristic
10-1 10-5 Ta = 75°C
Reverse current IR (A) Forward current IF (A)
10-6 Ta = 50°C 10-7
10-2
Ta = 12 Ta = 5°C 75 Ta = °C 25°C Ta = -25°C
10-3
Ta = 25°C 10
-8
10-4
0
0.2
0.4
0.6
0.8
1.0
1.2
10-9……
