器件名称: 1SS81
功能描述: Silicon Epitaxial Planar Diode for High Voltage Switching
文件大小: 26.49KB 共6页
简 介:1SS81
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-148A (Z) Rev. 1 Jul. 1995 Features
High reverse voltage. (VR = 150V) High reliability with glass seal.
Ordering Information
Type No. 1SS81 Cathode band Verdure Package Code DO-35
Outline
1 Cathode band
2
1. Cathode 2. Anode
1SS81
Absolute Maximum Ratings* 2 (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM* VR I FM I FSM * IO Pd Tj Tstg
2 1
Value 200 150 625 1 200 400 175 –65 to +175
Unit V V mA A mA mW °C °C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — 1.5 — Max 1.0 0.2 100 — 100 pF ns Unit V A Test Condition I F = 100mA VR = 150V VR = 200V VR = 0V, f = 1MHz I F = IR = 30mA, Irr = 3mA, R L = 100
2
1SS81
10
–1
Forward current I F (A)
10
–3
10
–4
0
0.2
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta = –25° C
10
–2
1.2
Fig.1 Forward current Vs. Forward voltage
–5
10
Ta = 75°C Reverse current I R (A) 10
–6
Ta = 50°C 10
–7
Ta = 25°C 10
–8
10
–9
0
50
150 200 250 100 Reverse voltage VR (V)
300
Fig.2 Reverse current Vs. Reverse voltage
……