器件名称: 1N4448
功能描述: HIGH SPEED SWITCHING DIODES
文件大小: 38.43KB 共1页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4150 THRU 1N4448
HIGH SPEED SWITCHING DIODES
VOLTAGE:50-100V CURRENT:0.15 to 0.2 A
FEATURES
Silicon epitaxial planar diodes Low power loss, high efficiency Low lekage Low forward voltagh High speed switching High current capability High reliability
DO-35
25.0MIN. L 25.0MIN.
0.52 2.0MAX. DO-35 L: DO-34 2.9 4.2
MECHANICAL DATA
Case:Glass sealed case Lead: MIL-STD- 202E, Method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.13 gram
MAX. MAX.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum power dissipation tamb=25°C Maximum Forward Voltage Maximum reverse current Maximum reverse recovery time Maximum junction capacitance Notes: VRRM Ptot VF IR trr CJ 1N4150 50 500 1.0/200 100/50 4.0 1N4151 75 500 1.0/50 50/50 2.0 4.0 1N4448 100 500 1.0/100 5000/75 4.0
units
V mW V/mA nA/V nS pF
1-1N914A,1N914B is same as 1N914, except different forward voltage|: 1N914A-1.0/20 V/mA 1N914B-1.0/100 V/mA 2.Suffix “M” stands for “DO-34” package. (e.g.:1N4148M)
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