器件名称: 1N4448W
功能描述: SILICON EPITAXIAL PLANAR DIODE
文件大小: 356.36KB 共3页
简 介:1N4448W
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
W1 Top View Marking Code: "W1" Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Forward Continuous Current Non-Repetitive Peak Forward Surge Current (at t = 1 s) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Pd Tj Tstg
Value 100 80 150 300 0.5 400 150 - 65 to + 150
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 A Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Symbol Min. 0.62 80 Max. 0.72 0.855 1 1.25 100 25 50 30 4 4 Unit
VF
V
IR
nA nA A A V pF ns
V(BR)R Ctot trr
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/04/2009
1N4448W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/04/2009
1N4448W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-123
∠ ALL ROUND
c
HE
D
A
E
bp
UNIT……
