器件名称: STP14NF10
功能描述: N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET
文件大小: 247.67KB 共8页
简 介:N-CHANNEL 60V - 0.1 - 14A TO-220 STripFET POWER MOSFET
TYPE STP14NF10
s s s s
STP14NF06
VDSS 60 V
RDS(on) < 0.12
ID 14 A
TYPICAL RDS(on) = 0.1 EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 °C APPLICATION ORIENTED CHARACTERIZATION
1 2
3
TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 14 10 56 45 0.3 6 50 –65 to 175 175
(1) I SD ≤7A, di/dt ≤300A/s, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25°C, I D = 114A, VDD = 15V
Unit V V V A A A W W/°C V/ns mJ °C °C
(q) Pulse width limited by safe operating area
December 2000
1/……
