器件名称: STP14NF10FP
功能描述: N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET
文件大小: 464.34KB 共11页
简 介:STB14NF10 STP14NF10 STP14NF10FP
N-CHANNEL 100V - 0.115 - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET
TYPE STB14NF10 STP14NF10 STP14NF10FP
s s s s
VDSS 100 V 100 V 100 V
RDS(on) <0.13 <0.13 <0.13
ID 15 A 15 A 10 A
3 1 2
s
TYPICAL RDS(on) = 0.115 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
3 1
TO-220FP
D2PAK TO-263 (Suffix “T4”)
3 1 2
TO-220
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STB14NF10 STP14NF10 VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operatin……
