器件名称: STP12PF06
功能描述: P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET
文件大小: 85.42KB 共8页
简 介:
STP12PF06
P - CHANNEL 60V - 0.18 - 12A TO-220 STripFET POWER MOSFET
TYPE STP12PF06
s s s s s
V DSS 60 V
R DS(o n) < 0.20
ID 12 A
TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATIONL
3 1 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
o o
Value 60 60 ± 20 12 8.4 48 60 0.4 6 -65 to 175 175
Unit V V V A A A W W /o C V/ns
o o
C C
() Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
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STP12PF06
THERMAL DATA
R thj -case R thj -amb R thc-sink T……
