器件名称: STP12PF06
功能描述: P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET
文件大小: 260.34KB 共10页
简 介:P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP STripFET II POWER MOSFET
Table 1: General Features
TYPE STP12PF06 STF12PF06
■ ■ ■ ■ ■
STP12PF06 STF12PF06
Figure 1:Package
RDS(on) < 0.20 < 0.20 ID 12 A 12 A
VDSS 60 V 60 V
TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
TO-220
TO-220FP
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter STP20PF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature 60 60 ± 20 12 8.4 48 60 0.4 6 200 -55 to 175
(1) ISD ≤12A, di/dt ≤200A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX……
