器件名称: STP11NM60N
功能描述: N-channel 600V - 0.37
文件大小: 489.4KB 共18页
简 介:STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600V - 0.37 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
Features
Type STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@TJmax) 650 V 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 < 0.45 ID
1 2
3
3
2 1
10 A 10 A 10 A 10 A(1) 10 A
TO-220
3 1
IPAK DPAK
3
1. Limited only by maximum temperature allowed ■ ■ ■
3 12
1
2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
IPAK
TO-220FP
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking B11NM60N D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK IPAK DPAK TO-220 TO-220FP Packaging Tube Tube Tape & reel Tube Tube
Order codes STB11NM60N-1 STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N
October 2007
Rev 3
1/18
www.st.com 18
Contents
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . ……
