器件名称: STP11NM60N
功能描述: N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET
文件大小: 470.38KB 共17页
简 介:STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N
N-channel 600V - 0.37 - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET
General features
Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45 <0.45 <0.45 <0.45 ID
3
3 2
1 2
1
10A 10A 10A (1) 10A
TO-220
IPAK
3
1. Limited only by maximum temperature allowed ■ ■ ■
1
3
100% avalanche tested Low input capacitance and gate charge Low gate input resistancel
DPAK
1
2
TO-220FP
Description
This series of devices is realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N Marking D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK DPAK TO-220 TO-220FP Packaging Tube Tape & reel Tube Tube
November 2006
Rev 2
1/17
www.st.com 17
Contents
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
……
