器件名称: 1N914B
功能描述: HIGH SPEED SILICON SWITCHING DIODE
文件大小: 382.61KB 共3页
简 介:Transys
Electronics
L I M I T E D
HIGH SPEED SILICON SWITCHING DIODE
IN914, B IN916 250mW DO- 35 Glass Axial Package
FEATURES
Intended for General Purpose Application. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL VR Reverses Voltage ( Continuous) VRRM Repetitive Peak Reverse Voltage Average Forward Current TA =25C IF (AV) IF (AV) TA =150C IF Forward Current (D.C.) IFRM Repetitive Peak Forward Current Non Repetitive Peak Surge Current IFSM tp=1sec Ptot Power Dissipation Tstg Storage Temperature Tamb Operating ambient Temperature ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VF Forward Voltage IF=10 IN914/916 IF=100mA, 1N914B IF=5mA, Reverse Breakdown Voltage Reverse Current V(BR)R IR IR=100A VR= 20V VR= 75V VR= 20V, Tj=150C
VALUE 75 100 75 10 75 225 500 250 -65 to +200 -65 to +175
UNIT V V mA mA mA mA mA mW C C
MIN
TYP
MAX 1.0 1.0 0.72
UNIT V V V V nΑ A
0.62 100
25 5
Diode Capacitance Reverse Recovery Time
Cd trr
VR=0, f=1MHz IF=10mA to IR=10mA RL=100 Measured at IR=1mA IF=10mA to IR=60mA RL=100 Measured at IR=1mA
2.5 8
pF ns
4
ns
IN914, B IN916 250mW DO- 35 Glass Axial Package DO-35 Glass Axial Package
A B A DIM A C D B NOTES 1. Cathode is marked by Band. 2. All dimensions are in mm. C D MIN 25.40 3.03 0.46 1.52 MAX — 4.44 0.56 2.29
DO-35, 52mm Taping Specification
1.05 MAX.
1.5 R MAX.
5.50 4.50
52 mm Taping Specification 1. T & A indicates Axial Tape & Ammo packing……
