器件名称: 1N914B
功能描述: Switching diode
文件大小: 57.61KB 共2页
简 介:1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
This product is available only outside of Japan.
!Applications High-speed switching
!External dimensions (Units : mm)
!Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability.
CATHODE BAND (BLACK) Type No. φ 0.5±0.1
C 29±1 3.8±0.2 29±1
A φ 1.8±0.2
!Construction Silicon epitaxial planar
ROHM : GSD EIAJ : JEDEC : DO-35
!Absolute maximum ratings (Ta = 25°C)
Type 1N4148 1N4150 1N4448 (1N914B) VRM (V) 100 50 100 VR (V) 75 50 75 IFM (mA) 450 600 450 IO (mA) 150 200 150 IF (mA) 200 250 200 IFSM 1s (A) 2 4 2 P (mW) 500 500 500 Tj (°C) 200 200 200 Topr (°C) 65~+200 65~+200 65~+200 Tstg (°C) 65~+200 65~+200 65~+200
!Electrical characteristics (Ta = 25°C)
VF (V) Type @ @ @
1mA
BV (V) Min. @
30mA
IR (A) Max. @25°C VR (V) 0.025 5.0 0.1 0.025 5.0 20 75 50 20 75 50.0
@
2mA
@
5mA
@
10mA
@
20mA
@
50mA
@
@
@
0.1mA 0.25mA
100mA 200mA 250mA
@ 5A 75
@ 100A 100
@150°C
trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100 20 4 4
Cr (pF)
1N4148 0.54 1N4150 0.62 1N4448 (IN914B) 0.62 0.72 1.0 0.74 0.86 0.92 1.0 1.0 0.66 0.76 0.82 0.87
50
100.0
50
2.5
4
100
50.0
20
4
4
The upper figure is the minimum VF and the lower figure is the maximum VF value.
1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
!Electrical characteristic curves (Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100 50
3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0
FORWARD CURRENT : IF (mA)
3000
REVE……
