器件名称: MSB709
功能描述: PNP General Purpose Amplifier Transistor Surface Mount
文件大小: 78.48KB 共1页
简 介:PNP General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSB709-RT1
3
1 2
2 BASE
1 EMITTER
CASE 318D–03, STYLE1 SC–59
MAXIMUM RATINGS (T A = 25 °C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol V (BR)CBO V (BR)CEO V (BR)EBO IC I C(P) Symbol PD TJ T stg Value –60 –45 –7.0 –100 –200 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc mAdc Unit mW °C °C Min –45 –60 –7.0 — — 210 — Max — — — –0.1 –100 340 –0.5 Unit Vdc Vdc Vdc Adc nAdc — Vdc
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25 °C)
Characteristic Collector-Emitter Breakdown Voltage (IC=–2.0mAdc,IB=0) Collector-Base Breakdown Voltage (IC=–10Adc,IE=0) Emitter-Base Breakdown Voltage (IE =–10Adc,IE=0) Collector-Base Cutoff Current (VCB =–45Vdc, IE=0) Collector-Emitter Cutoff Current (VCE=–10Vdc, IB=0) DC Current Gain (1) (VCE=–10Vdc, IC = –2.0mAdc) Collector-Emitter Saturation Voltage (IC = –100mAdc, IB=–10mAdc) 1. Pulse Test: Pulse Width < 300 s, D.C. < 2%. Symbol V (BR)CEO V(BR)CBO V (BR)EBO ICBO ICEO hFE1 VCE(sat)
DEVICE MARKING
Marking Symbol
ARX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
N2–1/1
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