器件名称: MSB709-RT1
功能描述: PNP General Purpose Amplifier Transistor Surface Mount
文件大小: 111.88KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSB709–RT1/D
PNP General Purpose Amplifier Transistor Surface Mount
COLLECTOR 3
MSB709-RT1
Motorola Preferred Device
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
MAXIMUM RATINGS (TA = 25°C)
Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value – 60 – 45 – 7.0 –100 – 200
CASE 318D–03, STYLE 1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector–Emitter Breakdown Voltage (IC = – 2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 Adc, IE = 0) Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0) DC Current Gain(1) (VCE = –10 Vdc, IC = – 2.0 mAdc) Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min – 45 – 60 – 7.0 — — 210 — Max — — — – 0.1 –100 340 – 0.5 Unit Vdc Vdc Vdc Adc nAdc — Vdc
DEVICE MARKING
Marking Symbol
ARX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Thermal Clad is a t……
