器件名称: MMDL101T1
功能描述: Schottky Barrier Diode
文件大小: 110.8KB 共3页
简 介:Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
MMDL101T1
1.0 pF SCHOTTKY BARRIER DIODE
Very Low Capacitance — Less than 1.0 pF @ Zero Volts Low Noise Figure — 6.0 dB Typ @ 1.0 GHz Device Marking: 4M
1
1 CATHODE
2 ANODE
2
PLASTIC SOD– 323 CASE 477
MAXIMUM RATINGS
Symbol VR Rating Reverse Voltage Value 7.0 Unit Vdc
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C
R θJA T J , T stg
*FR–5 Minimum Pad
ORDERING INFORMATION
Device MMDL101T1 Package SOD–323 Shipping 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 A) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) *Notes on Next Page Symbol V (BR)R CT IR NF V Min 7.0 Typ 10 Max — Unit Volts pF nAdc dB Vdc
— — — —
0.88 20 6.0 0.5
1.0 250 — 0.6
F
S1–1/3
MMDL101T1
TYPICAL CHARACTERISTICS
1.0 100
I R , REVERSE LEAKAGE ( A)
0.5
V R = 3.0 Vdc
0.2 0.1 0.07 0.05
I F , FORWARD CURRENT (mA)
0.7
10
T A = 85°C
T A = –40°C
1.0
T A = 25°C MMBD110T1
0.1 0.3 0.4 0.5 0.6 0.7 0.8
0.02
MMBD110T1
0.01……
