器件名称: MMDL101T1G
功能描述: Schottky Barrier Diode
文件大小: 54.36KB 共3页
简 介:MMDL101T1 Schottky Barrier Diode
Schottky barrier diodes are designed primarily for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
Features
Very Low Capacitance Less than 1.0 pF @ 0 V Low Noise Figure 6.0 dB Typ @ 1.0 GHz PbFree Package is Available
MAXIMUM RATINGS
Rating Reverse Voltage Symbol VR Value 7.0 Unit Vdc
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1.0 pF SCHOTTKY BARRIER DIODE
1 CATHODE 2 ANODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board, (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, JunctiontoAmbient Junction and Storage Temperature Range Symbol PD 200 1.57 RqJA TJ, Tstg 635 55 to +150 mW mW/°C °C/W °C 1 PLASTIC SOD323 CASE 477 STYLE 1 Max Unit 2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR5 Minimum Pad
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 0, f = 1.0 MHZ), (Note 2)* Reverse Leakage (VR = 3.0 V) Noise Figure (f = 1.0 GHz), (Note 3)* Forward Voltage (IF = 10 mA) *Notes on Next Page Symbol V(BR)R 7.0 CT IR NF VF 0.5 0.6 6.0 Vdc 20 250 dB 0.88 1.0 n……
