器件名称: NZT660
功能描述: PNP Low Saturation Transistor
文件大小: 200.59KB 共7页
简 介:NZT660/NZT660A
July 1998
NZT660 / NZT660A
C E
B
C
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
NZT660/NZT660A 60 80 5 3 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Max Characteristic NZT660/NZT660A PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W °C/W Units
1998 Fairchild Semiconductor Corporation
Nzt660.lwpPrPA 7/10/98 revC
NZT660/NZT660A
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V V……
