器件名称: NZT660_05
功能描述: PNP Low Saturation Transistor
文件大小: 434.27KB 共5页
简 介:NZT660/NZT660A PNP Low Saturation Transistor
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3 2 1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
VCEO VCBO VEBO IC TJ, TSTG
NOTES:
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
NZT660
60 80 5 3 - 55 ~ +150
NZT660A
60 60 5 3 - 55 ~ +150
Units
V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO
Ta = 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current
Test Conditions
IC = 10mA IC = 100A IE = 100A VCB = 30V VCB = 30V, TA = 100°C VEB = 4V NZT660 NZT660A
Min.
60 80 60 5
Typ.
Max.
Units
V V V V
100 10 100
nA A nA
On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VC……
