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NZT605

器件名称: NZT605
功能描述: NPN Darlington Transistor
文件大小: 83.35KB    共4页
生产厂商: FAIRCHILD
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简  介:NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06. 4 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO IC TJ, TSTG Collector-Base Voltage Emitter-Base Voltage Collector Current Collector-Emitter Voltage C = 25°C unless otherwise noted Parameter Value 110 140 10 Units V V V A °C - Continuous 1.5 -55 to +150 Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics * Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cut-off Current Conditions IC = 10mA, IB = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A IC = 250mA, IB = 0.2……
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