器件名称: NZT605
功能描述: NPN Darlington Transistor
文件大小: 38.95KB 共3页
简 介:NZT605
NZT605
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06.
4
3 2 1
SOT-223 1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 110 140 10 1.5 - 55 ~ +150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are baseed on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCB = 120V, IE = 0 VCE = 120V, IE = 0 VEB = 8.0V, IC = 0 IC = 50mA, VCE = 5.0V IC = 500mA, VCE = 5.0V IC = 1.0A, VCE = 5.0V IC = 2.0A, VCE = 5.0V IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA IC = 1.0A, IB = 1.0mA IC = 1.0A, VCE = 5.0V IC = 100mA, VCE = 10V, f = 20MHz 150 2000 5000 2000 500 Min. 110 140 10 10 10 100 Max. Units V V V nA nA nA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Volta……