EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > WTE > 1N5401-TB

1N5401-TB

器件名称: 1N5401-TB
功能描述: 3.0A STANDARD DIODE
文件大小: 48.39KB    共4页
生产厂商: WTE
下  载:    在线浏览   点击下载
简  介:WTE POWER SEMICONDUCTORS 1N5400 – 1N5408 Pb 3.0A STANDARD DIODE Features ! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! Case: DO-201AD, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.2 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D DO-201AD Dim Min Max 25.4 — A 7.20 9.50 B 1.20 1.30 C 4.80 5.30 D All Dimensions in mm C Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N 5400 50 35 @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 3.0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO 1N 5401 100 70 1N 5402 200 140 1N 5404 400 280 3.0 1N 5406 600 420 1N 5407 800 560 1N 5408 1000 700 Unit V V A IFSM VFM IRM Cj RJA Tj TSTG 200 1.0 5.0 100 50 20 -65 to +125 -65 to +150 A V A pF °C/W °C °C Typical Junction Capacitance (Note 2) Typical Thermal Resistanc……
相关电子器件
器件名 功能描述 生产厂商
1N5401-TB 3.0A STANDARD DIODE WTE
1N5401-TB 3.0A SILICON RECTIFIER WTE
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2