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1N5401-TB

器件名称: 1N5401-TB
功能描述: 3.0A SILICON RECTIFIER
文件大小: 39.66KB    共3页
生产厂商: WTE
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简  介:W TE PO WE R SEM IC O ND UC TO R S 1N5400 – 1N5408 3.0A SILICON RECTIFIER Features ! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.2 grams (approx.) Mounting Position: Any Marking: Type Number Epoxy: UL 94V-O rate flame retardant D DO-201AD Dim Min Max A 25.4 — B 8.50 9.50 C 1.20 1.30 D 5.0 5.60 All Dimensions in mm C ! Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N 5400 50 35 @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 3.0A @TA = 25°C @TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO 1N 5401 100 70 1N 5402 200 140 1N 5404 400 280 3.0 1N 5406 600 420 1N 5407 800 560 1N 5408 1000 700 Unit V V A IFSM VFM IRM Cj RJA Tj TSTG 200 1.0 5.0 100 50 18 -65 to +125 -65 to +150 A V A pF K/W °C °C Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperatu……
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1N5401-TB 3.0A STANDARD DIODE WTE
1N5401-TB 3.0A SILICON RECTIFIER WTE
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