器件名称: 1N5399
功能描述: SILICON RECTIFIER
文件大小: 22.81KB 共2页
简 介:RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5391 THRU 1N5399
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes
FEATURES
* * * * Low cost Low leakage Low forward voltage drop High current capability
DO-15
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.38 gram
1.0 (25.4) MIN. .034 (0.9) DIA. .028 (0.7)
.300 (7.6) .230 (5.8) .140 (3.6) DIA. .104 (2.6) 1.0 (25.4) MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375” (9.5mm) lead length at TL = 70oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) Typical Thermal Resistance Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.5A DC Maximum DC Reverse Current @T A = 25 oC at Rated DC Blocking Voltage @T A = 100 o C Maximum Full Load Reverse Current Average, Full Cycle o .375” (9.5mm……
