器件名称: 1N5399-TB
功能描述: 1.5A SILICON RECTIFIER
文件大小: 45.53KB 共3页
简 介:W TE
PO WE R SEM IC O ND U C TO RS
1N5391 – 1N5399
1.5A SILICON RECTIFIER
Features
! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A
Mechanical Data
! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.40 grams (approx.) Mounting Position: Any Marking: Type Number D
DO-15 Dim Min Max A 25.4 — B 5.50 7.62 C 0.71 0.864 D 2.60 3.60 All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1N 5391 50 35
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 1.5A @TA = 25°C @TA = 100°C
Symbol VRRM VRWM VR VR(RMS) IO
1N 5392 100 70
1N 5393 200 140
1N 5395 400 280 1.5
1N 5397 600 420
1N 5398 800 560
1N 5399 1000 700
Unit
V V A
IFSM VFM IRM Cj RJA Tj TSTG
50 1.0 5.0 50 30 50 -65 to +125 -65 to +150
A V A pF K/W °C °C
Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range
*Glass……
