器件名称: HZM6.8MFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 157.17KB 共5页
简 介:HZM6.8MFA
Silicon Planar Zener Diode for Surge Absorb
REJ03G1209-0200 (Previous: ADE-208-833A) Rev.2.00 Jun 13, 2005
Features
HZM6.8MFA has four devices in a monolithic, and can absorb surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8MFA Laser Mark 68M Package Name MPAK-5 Package Code (Previous Code) PLSP0005ZC-A (MPAK-5)
Pin Arrangement
1 2
5 4 3 (Top View)
1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode
Rev.2.00 Jun 13, 2005 page 1 of 4
HZM6.8MFA
Absolute Maximum Ratings
(Ta = 25°C)
Item Power dissipation Pd * Junction temperature Tj Storage temperature Tstg Note: Four device total, See Fig.2. Symbol Value 200 150 55 to +150 Unit mW °C °C
Electrical Characteristics *1
(Ta = 25°C)
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.00 2 130 30 — Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 3.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse.
Notes: 1. Per one device 2. Failure criterion ; IR > 2 A at VR = 3.5 V.
Rev.2.00 Jun 13, 2005 page 2 of 4
HZM6.8MFA
Main Characteristic
10-1 10-2 10-3
Zener Current IZ (A)
10-4 10-5 10-6 10-7 10-8 10-9
Ta=75°C Ta=25°C Ta=-25°C
0
1
2
3
4
5
6
7
8
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
250
1.0mm
Power Dissipation Pd (mW)
200
Cu Foil
150
Printed circuit……
