器件名称: HZM6.8MFA
功能描述: Silicon Planar Zener Diode for Surge Absorb
文件大小: 24.64KB 共5页
简 介:HZM6.8MFA
Silicon Planar Zener Diode for Surge Absorb
ADE-208-833(Z) Rev 0 Dec. 1999 Features
HZM6.8MFA has four devices in a monolithic, and can absorb surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.8MFA Laser Mark 68M Package Code MPAK-5
Outline
1 2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM6.8MFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd —
Min 6.47 — — — 30
Typ — — — — —
Max 7.00 2 130 30 —
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5V.
2
HZM6.8MFA
Main Characteristic
10 -1 10 10 (A) 10 10 Zener Current 10 10
-2
-3
-4
Iz
-5
-6
-7
10 10
-8
Ta=75°C Ta=25°C Ta=-25°C
-9
0
1
2
3
4
5
6
7
8
Zener Voltage
Vz (V)
Fig.1 Zener current Vs. Zener voltage 250
1.0mm
200 Power Dissipation Pd (mW)
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
50
0 0 50 100 150 200 Ambient Temperature Ta (°C) Fig.2 Power Diss……
