器件名称: HVV1214-025
功能描述: L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200
文件大小: 677.91KB 共2页
简 介:HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200 200! Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, ssPulse, L-Band Radar Pulsed ! Power Transistor HVV1214-025 L-Band RadarMHz, Pulsed Power Transistor 1200-1400 200s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty HVV1214-025 PRODUCT OVERVIEW 1200-1400 MHz, 200!s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200s Pulse, 10% Duty DESCRIPTION for Ground Based PACKAGE Radar Applications DESCRIPTION The high power HVV1214-025 device is a high
DESCRIPTION DESCRIPTION
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The innovative Semiconductor Company! The i nnovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company!
Excellent Ruggedness Excellent Ruggedness x Supply Voltage 48V 48V Supply Voltage The high power HVV1214-075 device is a high High Power Gain 48V Supply Voltage silicon enhancement mode RF transistor voltage High Power Gain Excellent Ruggedness High Power Gain for Ruggedness L-Band pulsed RATINGS radar applications designed Excellent ABSOLUTE MAXIMUM 48V 48V Supply Supply Voltage Excellent Ruggedness over the frequency range operating Voltage Symbol Parameter Value from Unit Symbol Parameter Value Unit 48V Supply Voltage 1.2GHz to 1.4GHz. VDSS Drain-Source Voltage 105 V V Drai……
