器件名称: HVV1214-025S
功能描述: L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200
文件大小: 225.7KB 共2页
简 介:HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty
DESCRIPTION
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SMT package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. Unit V V A W °C °C
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ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +200 200
RUGGEDNESS
The HVV1214-25 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation.
Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 25W F = 1400 MHz Max 20:1 Units VSWR
THERMAL CHARACTERISTICS
Symbol θJC1 Parameter Thermal Resistance Max 1.5 Unit °C/W
ELECTRICAL CHARACTERISTICS
Symbol VBR(DSS) IDSS IGSS GP1 IRL1 ηD1 PD1 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Pulse Droop Conditions VGS=0V,ID=1mA VGS=0V,VDS=48V VGS=5V,VDS=0V POUT……
