器件名称: IXTP01N100
功能描述: High Voltage MOSFET
文件大小: 51.62KB 共2页
简 介:High Voltage MOSFET
N-Channel, Depletion Mode
IXTP 01N100D VDSS ID25
RDS(on)
= 1000 V = 100 mA = 110
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C;TJ = 25°C to 150°C TC = 25°C, pulse width limited by TJ TC = 25°C TA = 25°C
Maximum Ratings TO-220AB (IXTP) 1000 1000 ± 20 ± 30 100 400 25 1.1 -55 ... +150 150 -55 ... +150 V V V V mA mA W W °C °C °C °C g Features
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GD
D (TAB) S
Normally ON mode Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching speed
1.6 mm (0.063 in.) from case for 10 s
300 1
Applications
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Level shifting Triggers Solid state relays Current regulators
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 -2.5 -5 ±100 TJ = 25°C TJ = 125°C 90 250 10 250 110 V V nA A A mA
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VDSS VGS(off) IGSS IDSS(off) RDS(on) ID(on)
VGS = -10 V, ID = 25 A VDS = 25V, ID = 25 A VGS = ±20 VDC, VDS = 0 VDS = VDSS, VGS = -10 V
VGS = 0 V, ID = 50 mA Note 1 VGS = 0 V, VDS = 50V Note 1
2001 IXYS All rights reserved
98809A (12/01)
IXTP 01N100D
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 100 150 120 VGS = -10 V, VDS = 25 V, f = 1 MHz 15 3 8 Vgs Vds RG = 0 V, to -10 V, ID = 50 mA = 100 V = 30, (External) 6 30 51 5 mS pF pF pF ns ns ns ns K/W
Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side
TO-220……
