器件名称: IXTP01N100D
功能描述: N-Channel, Depletion Mode High Voltage MOSFET
文件大小: 93.01KB 共2页
简 介:High Voltage MOSFET
N-Channel, Depletion Mode
IXTP 01N100D IXTU 01N100D IXTY 01N100D
VDSS = 1000 V ID25 = 100 mA Ω RDS(on) = 110
Preliminary Data Sheet
Symbol VDSX VDGX VGS VGSM IDSS IDM PD TJ TJM Tstg TL TISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C; TJ = 25°C to 150°C TC = 25°C, pulse width limited by TJ TC = 25°C TA = 25°C
Maximum Ratings 1000 1000 ± 20 ± 30 100 400 25 1.1 -55 ... +150 150 -55 ... +150 V V V V mA mA W W °C °C °C °C °C Nm/lb. g g g TO-252 (IXTY)
G D S D (TAB) G DS D (TAB)
TO-220 (IXTP)
TO-251 (IXTU)
1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU) Mounting torque TO-220 TO-220 TO-251 TO-252
300 300 1.3 / 10 4 0.8 0.8
G S D (TAB)
Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSX VGS(off) IGSS IDSX(off) RDS(on) ID(on) VGS = -10 V, ID = 25 μA VDS = 25V, ID = 25 μA VGS = ± 20 VDC, VDS = 0 VDS = VDSX, VGS = -10 V VGS = 0 V, ID = 50 mA VGS = 0 V, VDS = 25V TJ = 125°C Note 1 Note 1 90 100 Characteristic Values min. typ. max. 1000 -2.5 -5 ±100 10 250 110 V V nA μA μA Ω mA Features z Normally ON mode
z z z
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching speed
Applications z Level shifting
z z z
Triggers Solid state relays Current regulators
2006 IXYS All rights reserved
98809B (01/06)
IXTP 01N100D
TO-220 AD Outline
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, u……
