器件名称: IXGH32N60B
功能描述: HiPerFAST IGBT
文件大小: 35.55KB 共2页
简 介:HiPerFASTTM IGBT
IXGH32N60B
VCES IC25 VCE(sat) tfi
= = = =
600 V 60 A 2.5 V 80 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features International standard package JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD 6 g
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
5 200 1 ±100 2.5
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages High power density Very fast switching speeds for high frequency applications
IXYS reserves the right to change l……
