器件名称: IXGH32N60BU1
功能描述: HiPerFAST IGBT with Diode
文件大小: 139.14KB 共6页
简 介:HiPerFASTTM IGBT with Diode
IXGH 32N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 2.3 V = 80 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 100 H TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W °C °C °C °C Nm/lb.in. g
TO-247 AD
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
Features z International standard packages JEDEC TO-247 SMD z High frequency IGBT and antiparallel FRED in one package z High current handling capability z Newest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z Space savings (two devices in one package) z High power density z Very fast switching speeds for high frequency applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 500 8 ± 100 2.3 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750A, VGE = 0 V = 250 A, ……
