器件名称: H2N6718
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 42.82KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2001.04.24 Page No. : 1/4
H2N6718L
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718L is designed for general purpose medium power amplifier and switching applications.
Features
High Power: 850mW High Current: 1A
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 850 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ...................................................................................... 100 V VCEO Collector to Emitter Voltage ................................................................................... 100 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current (Continue) ............................................................................................ 1 A IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VC……
