器件名称: H2N6718V
功能描述: NPN EPITAXIAL PLANAR TRANSISTOR
文件大小: 39.16KB 共4页
简 介:HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B Issued Date : 1993.09.24 Revised Date : 2000.12.01 Page No. : 1/4
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power amplifier and switching.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C)................................................................................... 1.6 W Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 100 V BVCEO Collector to Emitter Voltage................................................................................. 100 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current .............................................................................................................. 1 A
Electrical Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 100 5 80 50 20 50 Typ. Max. 100 350 250 20 Unit V V V nA mV Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=80V, IE=0 IC=350mA, ……
