器件名称: FZT788
功能描述: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 81.24KB 共2页
简 介:FZT788B FZT788B
C ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage
IC/IB=200
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
-55°C +25°C +100°C +175°C
1.8
1.6
1.4 1.2
IC/IB=200 IC/IB=100 IC/IB=10
Tamb=25°C
1.8
1.6
E C B
1.4 1.2
- (Volts)
- (Volts)
1.0
1.0
APPLICATIONS * Battery powered circuits COMPLEMENTAY TYPE FZT688B PARTMARKING DETAIL FZT788B
0.8
0.8
0.6
0.6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 I+ - Collector Current (Amps) 10
V
0.4
V
0.4
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg SYMBOL MIN. -15 -15 V(BR)EBO ICBO IEBO VCE(sat) -5 -0.1 -0.1 -0.15 -0.25 -0.45 -0.5 TYP.
VALUE -15 -15 -5 -8 -3 2 -55 to +150 MAX. UNIT V V V
A A
UNIT V V V A A W °C CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V V V V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA*
0.2 0
0.01 0.1 1 I+ - Collector Current (Amps)
10
0.2 0
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER
VCE(sat) v IC
VCE(sat) v IC
1.6
1.4 1.2
+100°C +25°C -55°C
-55°C +25°C +100°C +175°C
VCE=2V IC/IB=200
1200
1.6
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown ……
