器件名称: FZT788B
功能描述: SOT223 PNP SILICON PLANAR MEDIUM
文件大小: 93.27KB 共2页
简 介:SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTAY TYPE FZT688B PARTMARKING DETAIL FZT788B C
FZT788B
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. VALUE -15 -15 -5 -8 -3 2 -55 to +150 MAX. UNIT V V V -0.1 -0.1 -0.15 -0.25 -0.45 -0.5 -0.9 -0.75 500 400 300 150 100 225 25 35 400 1500
A A
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
SYMBOL MIN. -15 -15 -5 CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA* IC=-1A, IB=-5mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequ……
