器件名称: FZT755
功能描述: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 88.99KB 共2页
简 介:FZT755 FZT755
C
SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
TYPICAL CHARACTERISTICS
IB1=IB2=IC/10
ts
td
tr
ts
tf
0.8
s
s
VCE=10V
ISSUE 4 FEBRUARY 1996 7 FEATURES * 25 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 6A (pulsed).
2.0
0.5
E C B
td
0.6
0.4
- (Volts)
IC/IB =10
COMPLEMENTARY TYPE PARTMARKING DETAIL
FZT655 FZT755
0.3 tf
0.4
1.0
V
0.2 tr
Switching time
0.2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
0.1 1
0.1
SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg at Tamb=25°C
VALUE -150 -150 -5 -2 -1 2 -55 to +150
UNIT V V V A A W °C
0
0.01
0
0.001
0.01
0.1
1
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
1.0 IC/IB=10
Operating and Storage Temperature Range
80
VCE=5V
0.8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VCE(sat) VBE(sat) VBE(on) hFE 50 50 20
10 100
60
TYP. -150 -150 -5
MAX.
UNIT V V V -0.1
A
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-125V
40
- (Volts)
0.6
- Normalised Gain (%)
h
V
20
0.4
0.001
0……
