器件名称: FZT755_05
功能描述: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
文件大小: 40.54KB 共2页
简 介:SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 1A (pulsed). COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT655 FZT755
FZT755
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE -150 -150 -5 -2 -1 2 -55 to +150 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. -150 -150 -5 -0.1 -0.1 -0.5 -0.5 -1.1 -1.0 50 50 20 30 20 TYP. MAX. UNIT V V V A A V V V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-125V VEB=-3V IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* MHz pF IC= - 1 0 m A , f=20MHz VCE=-20V C o l l e c t o r - B a s e V(BR)CBO Breakdown Voltage C o l l e c t o r - E m i t t e r V(BR)CEO Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)EBO ICBO IEBO
C o l l e c t o r - E m i t t e r VCE(sat) Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(sat) VBE(on)
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo
300
VCB=-10V f=1MHz
*Measured under pulsed conditions. Pu……
