器件名称: FZT694
功能描述: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
文件大小: 98.92KB 共2页
简 介:FZT694B FZT694B
C
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
TYPICAL CHARACTERISTICS
IC/IB=100
IC/IB=200
Tamb=25°C
0.8
IC/IB =10
IC/IB=100
0.8
-55°C +25°C +100°C +175°C
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 UNIT V V V A A W °C
- (Volts)
0.4
- (Volts)
0.6
0.6
ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B
0.4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage
0.01 0.1 1 10
V
0.2
V
0.2
0
0
0.01
0.1
1
10
Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C
I+ - Collector Current (Amps)
I+ - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
VCE=2V IC/IB=100
Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage MIN. 120 120 5
1.4
+100°C +25°C -55°C
-55°C +25°C +100°C +175°C
1.5K
1.6
1.4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
TYP. MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9
A A
1.2
1.2
CONDITIONS……
