器件名称: FZT694B
功能描述: SOT223 NPN SILICON PLANAR MEDIUM
文件大小: 111.09KB 共2页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995 FEATURES * High VCEO / Very Low Saturation Voltage * Gain of 400 at IC=200mA APPLICATIONS * Darlington replacement * Relay / solenoid driver PARTMARKING DETAIL FZT694B
FZT694B
C
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 120 120 5 2 1 2 -55 to +150 MAX. UNIT V V V 0.1 0.1 0.25 0.5 0.9 0.9
A A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff 500 400 150 130 200 9 80 2900 MHz pF pF ns ns MIN. 120 120 5
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
TYP. CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V
V V V V
*Measured under pulsed conditions. Pulse width=300s. Duty cycle ≤2% Spice parameter data i……
