器件名称: FZT605
功能描述: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
文件大小: 75.61KB 共2页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 4 - MARCH 2001 FEATURES * * Guaranteed hFE Specified up to 2A Fast Switching FZT605 FZT705 C
FZT605
E PARTMARKING DETAIL COMPLEMENTARY TYPES C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 140 120 10 4 1.5 2 -55 to +150 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. MAX. UNIT CONDITIONS. V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) h FE 140 120 10 0.01 10 0.1 10 1.0, 1.5 1.8 1.7 2K 5K 2K 100K 0.5K 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MHz pF pF nsec nsec V V V I C=100 A I C=10mA* I E=100 A V CB=120V V CB=120V, T amb =100°C V EB=8V V CES=120V I C=250mA, I B=0.25mA* I C=1A, I B=1mA* I C=1A, I B=1mA* I C =1A, V CE=5V* I C=50mA, V CE=5V I C=500mA, V CE=5V* I C=1A, V CE=5V* I C=2A, V CE=5V* I C=100mA, V CE=10V f=20MHz V EB=500mV, f=1MHz VCB=10V, F=1MHz I C=500mA, V CE=……
