器件名称: FZT605
功能描述: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
文件大小: 70.95KB 共3页
简 介:SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995 FEATURES * * Guaranteed hFE Specified up to 2A Fast Switching DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg FZT604 120 100 10 4 1.5 2 C
FZT604 FZT605
PARTMARKING DETAIL COMPLEMENTARY TYPES -
E C B FZT605 140 120 UNIT V V V A A W °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
SYMBOL MIN. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO 120 140 100 120 10 0.01 10 0.01 10 IEBO FZT604 FZT605 VCE(sat) VBE(sat) VBE(on) hFE ICES 0.1 10 10 1.0, 1.5 1.8 1.7 2K 5K 100K 2K 0.5K V V V V
A A A A A A A
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current
FZT604 FZT605 FZT604 FZT605 FZT604 FZT605
IC=100 A IC=100 A IC=10mA* IC=10mA* IE=100 A VCB=100V VCB=100V,T amb =100°C VCB=120V VCB=120V,T amb =100°C VEB=8V VCES=100V VCES=120V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V*
Emitter-Base Breakdown Voltage
Emitter Cut-Off Current Collector-Emitter Cut-Off Current
Collector-EmitterSaturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static For……
