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Si1302DL

器件名称: Si1302DL
功能描述: N-Channel 30-V (D-S) MOSFET
文件大小: 68.78KB    共5页
生产厂商: VISAY
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简  介:Si1302DL New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.700 @ VGS = 4.5 V 0.53 rDS(on) (W) 0.480 @ VGS = 10 V ID (A) 0.64 SOT-323 SC-70 (3-LEADS) G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C Symbol VDS VGS 5 secs 30 Steady State Unit V "20 0.64 0.60 0.48 1.5 0.26 0.31 0.20 –55 to 150 0.23 0.28 0.18 ID 0.51 IDM IS A W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71249 S-02367—Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 355 380 285 Maximum 400 450 340 Unit _C/W 1 Si1302DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS =……
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