器件名称: SI1302DL_08
功能描述: N-Channel 30-V (D-S) MOSFET
文件大小: 68.78KB 共5页
简 介:Si1302DL
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 0.700 @ VGS = 4.5 V 0.53
rDS(on) (W)
0.480 @ VGS = 10 V
ID (A)
0.64
SOT-323 SC-70 (3-LEADS)
G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D
S
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
30
Steady State
Unit
V
"20 0.64 0.60 0.48 1.5 0.26 0.31 0.20 –55 to 150 0.23 0.28 0.18
ID 0.51 IDM IS A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71249 S-02367—Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
355 380 285
Maximum
400 450 340
Unit
_C/W
1
Si1302DL
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS =……
