器件名称: SI1032R
功能描述: N-Channel 20-V (D-S) MOSFET
文件大小: 53.62KB 共4页
简 介:Si1032R/X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
5 @ VGS = 4.5 V 20 7 @ VGS = 2.5 V 9 @ VGS = 1.8 V 10 @ VGS = 1.5 V
ID (mA)
200 175 150 50
1.5-V Rated
FEATURES
D D D D D D Low-Side Switching Low On-Resistance: 5 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 1.8-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-75A or SC-89
G 1 Ordering Information: 3 S 2 Top View D SC-75A (SOT-416): Si1032R-T1 SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free) SC-89 (SOT-490): Si1032X-T1 SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free) Marking Code: G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Si1032R Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta TA = 25_C TA = 85_C
Si1032X 5 secs
20 "6
Symbol
VDS VGS ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg ESD
5 secs
Steady State
Steady State
Unit
V
200 110 500 250 280 145
140 100
210 150 600
200 140 mA
Continuous Source Current (diode conduction)a Maximum Power Dissipationa for SC-75 SC 75
200 250 130
300 340 170 55 to 150 2000
240 300 150 mW _C V
Operating Junction and Storage Temperature Range Gate……
