器件名称: Si1032R-T1-E3
功能描述: N-Channel 1.5-V (G-S) MOSFET
文件大小: 121.49KB 共5页
简 介:Si1032R/X
Vishay Siliconix
N-Channel 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50
FEATURES
Halogen-free Option Available Low-Side Switching Low On-Resistance: 5 Ω Low Threshold: 0.9 V (typ.) Fast Switching Speed: 35 ns TrenchFET Power MOSFETs: 1.5-V Rated 2000 V ESD Protection
RoHS
COMPLIANT
BENEFITS
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SC-75A or SC-89
G 1
APPLICATIONS
3 D
S
2 Marking Code: G Top View
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
Ordering Information: Si1032R-T1-E3 (SC-75A, Lead (Pb)-free) Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-E3 (SC-89, Lead (Pb)-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Si1032R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa for SC-75 TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD 250 280 145 200 110 500 200 250 130 - 55 to 150 2000 300 340 170 140 100 5s Steady State 20 ±6 210 150 600 240 300 150 mW °C V 200 140 mA 5s Si1032X Stea……
