器件名称: Si1031X
功能描述: P-Channel 20-V (D-S) MOSFET
文件大小: 104.74KB 共5页
简 介:Si1031R/X
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 8 at VGS = - 4.5 V - 20 12 at VGS = - 2.5 V 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) - 150 - 125 - 100 - 30
FEATURES
Halogen-free Option Available High-Side Switching Low On-Resistance: 8 Ω Low Threshold: 0.9 V (typ.) Fast Switching Speed: 45 ns TrenchFET Power MOSFETs: 1.5-V Rated ESD Protected: 2000 V
RoHS
COMPLIANT
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X
3 D
SC-75A or SC-89
G 1
BENEFITS
Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
S
2 Top View
Marking Code: H
Ordering Information: Si1031R-T1-E3 (SC-75A, Lead (Pb)-free) Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-E3 (SC-89, Lead (Pb)-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Si1031R Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg ESD - 250 280 145 - 150 - 110 - 500 - 200 250 130 - 55 to 150 2000 - 340 340 170 - 140 - 100……
