器件名称: Si1031X
功能描述: P-Channel 20-V (D-S) MOSFET
文件大小: 42.9KB 共4页
简 介:Si1031R/X
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
8 @ VGS = -4.5 V -20 12 @ VGS = -2.5 V 15 @ VGS = -1.8 V 20 @ VGS = -1.5 V
1.5V Rated
ID (mA)
-150 -125 -100 -30
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 45 ns 1.8-V Operation Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SC-75A or SC-89
G 1
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X
3 D
S
2 Top View
Marking Code: H
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Si1031R Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta TA = 25_C TA = 85_C
Si1031X 5 secs
-20 "6 V -165 -150 -600 -155 -125 mA
Symbol
VDS VGS
5 secs
Steady State
Steady State
Unit
-150 ID -110 IDM IS -250 280 PD TJ, Tstg ESD 145 -500
-140 -100
Continuous Source Current (diode conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C
-200 250 130
-340 340 170 -55 to 150 2000
-240 300 150 mW _C V
Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. Document ……
