器件名称: BUZ10
功能描述: N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET
文件大小: 79.25KB 共8页
简 介:
BUZ10
N - CHANNEL 50V - 0.06 - 23A TO-220 STripFET MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07
ID 23 A
TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN HUMIDITY CAT EGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
o o
Value 50 50 ± 20 23 92 75 -65 to 175 175 E 55/150/56
Un it V V V A A W
o o
C C
February 2000
1/8
BUZ10
THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.0 62.5
o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30 V) Valu e 10 150 Unit A mJ
EL……
